High power IR Chips and IR LEDs
EPIGAP Optronic GmbH announces the latest generation of super- high-power infrared (IR) emitters at peak emission wavelength 850nm. Based on gallium aluminum arsenide (GaAlAs) technology, the product family includes chips, thru-hole, TO-package or SMDs mainly used in security and automation applications. The new device in TO has a viewing angle of ± 3 deg and very uniform optical beam with ultra-high optical output power, attended by less degradation. Total radiant power is 18mW (typical) at 50mA bandwidth of 35 nm at 50 percent. The EOLD-855-015 is highly durable and metal surfaces are gold-plated. The TO-46 package can be stored and/or operated in extreme temperatures ranging from -40 degrees C to 100 degrees C, (maximum junction temperature at 100 degrees C). The new IR emitters EOLD-855-515 in 5mm plastic feature optical power 150 mW/sr at 50mA and rise times of 25 nsec and fall times of 15 nsec. With excellent life time test results already for bare die the products are also very well suitable for customized chip on board solutions.