Ultra-thin ferroelectric material for next-generation electronics -- COMPAMED Trade Fair

Ultra-thin ferroelectric material for next-generation electronics

10/12/2016

Image: graphic of integrated intensity of YHO-7 110 diffraction peak as a function of temperature; Copyright: Tokyo Institute of Technology

Scientists at Tokyo Institute of Technology have demonstrated the potential of a new, thin-film ferroelectric material that could improve the performance of next-generation sensors and semi-conductors; © Tokyo Institute of Technology